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ZXM61N03F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
30
V
Gate Source Voltage
V GS
± 20
V
Continuous Drain Current (V GS =10V; T A =25°C)(b)
I D
1.4
A
(V GS =10V; T A =70°C)(b)
1.1
Pulsed Drain Current (c)
I DM
7.3
A
Continuous Source Current (Body Diode) (b)
I S
0.8
A
Pulsed Source Current (Body Diode)
I SM
7.3
A
Power Dissipation at T A =25°C (a)
P D
625
mW
Linear Derating Factor
5
mW/°C
Power Dissipation at T A =25°C (b)
P D
806
mW
Linear Derating Factor
6.4
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R θ JA
R θ JA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JUNE 2004
2
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